ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "5806341b-d5d7-4dad-8ea4-f4a82cae401f"}, "_deposit": {"created_by": 14, "id": "601", "owners": [14], "pid": {"revision_id": 0, "type": "depid", "value": "601"}, "status": "published"}, "_oai": {"id": "oai:shonan-it.repo.nii.ac.jp:00000601", "sets": ["93"]}, "author_link": ["1843", "1841", "1842", "1839", "1844", "1845", "1840", "1846", "1838", "1847"], "item_10002_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-03-31", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "47", "bibliographicPageStart": "39", "bibliographicVolumeNumber": "50", "bibliographic_titles": [{"bibliographic_title": "湘南工科大学紀要"}, {"bibliographic_title": "Memoirs of Shonan Institute of Technology", "bibliographic_titleLang": "en"}]}]}, "item_10002_description_12": {"attribute_name": "論文ID(NAID)", "attribute_value_mlt": [{"subitem_description": "40020787531", "subitem_description_type": "isIdenticalTo"}]}, "item_10002_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Trend of novel semiconductor memory and transistor for post Moore’s low have been described. For promising candidates for replacing presently available planar transistor are 3 dimensional transistors such as FinFET and SGT. Next candidate of FinFET is novel FinFET technology featured with plural number of trench depth with only one process step. Promising candidates of next generation memory are stacked type NAND flash memory and stacked type NAND new type memory which use SGT and BiCS technology. Especially, stacked type NAND new type memory has potential which replace not only high performance memory but also presently available system LSI.", "subitem_description_type": "Abstract"}]}, "item_10002_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "湘南工科大学"}]}, "item_10002_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AN10400308", "subitem_source_identifier_type": "NCID"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "渡辺, 重佳"}, {"creatorName": "ワタナベ, シゲヨシ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "1838", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "廣島, 佑"}, {"creatorName": "ヒロシマ, ユウ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "1839", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "玉井, 翔人"}, {"creatorName": "タマイ, ショウト", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "1840", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "横田, 智広"}, {"creatorName": "ヨコタ, トモヒロ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "1841", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "佐藤, 匠"}, {"creatorName": "サトウ, タクミ", "creatorNameLang": "ja-Kana"}], "nameIdentifiers": [{"nameIdentifier": "1842", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "WATANABE, Shigeyoshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "1843", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "HIROSHIMA, Yu", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "1844", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "TAMAI, Shoto", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "1845", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "YOKOTA, Tomohiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "1846", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "SATO, Takumi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "1847", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-01-27"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "039-047_渡辺 重佳・廣島 佑・ 玉井 翔人・ 横田 智広・佐藤 匠_ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向.pdf", "filesize": [{"value": "1.3 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_11", "mimetype": "application/pdf", "size": 1300000.0, "url": {"label": "ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向", "url": "https://shonan-it.repo.nii.ac.jp/record/601/files/039-047_渡辺 重佳・廣島 佑・ 玉井 翔人・ 横田 智広・佐藤 匠_ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向.pdf"}, "version_id": "3e3a2704-73bc-40bb-94f2-6f7c46ab53d8"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "LSI, 3 dimensional transistor, FinFET, system LSI, MRAM, flash memory", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向"}, {"subitem_title": "Trend of novel semiconductor memory and transistor for post Moore’s low", "subitem_title_language": "en"}]}, "item_type_id": "10002", "owner": "14", "path": ["93"], "permalink_uri": "https://shonan-it.repo.nii.ac.jp/records/601", "pubdate": {"attribute_name": "公開日", "attribute_value": "2017-01-27"}, "publish_date": "2017-01-27", "publish_status": "0", "recid": "601", "relation": {}, "relation_version_is_last": true, "title": ["ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向"], "weko_shared_id": -1}
  1. 紀要
  2. 50(1) (20160331)

ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向

https://shonan-it.repo.nii.ac.jp/records/601
https://shonan-it.repo.nii.ac.jp/records/601
9d2bc2fb-0b1f-4e6e-b03e-3eaa1b262973
名前 / ファイル ライセンス アクション
039-047_渡辺 ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向 (1.3 MB)
license.icon
Item type 紀要論文 / Departmental Bulletin Paper(1)
公開日 2017-01-27
タイトル
タイトル ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向
タイトル
言語 en
タイトル Trend of novel semiconductor memory and transistor for post Moore’s low
言語
言語 jpn
キーワード
言語 en
主題Scheme Other
主題 LSI, 3 dimensional transistor, FinFET, system LSI, MRAM, flash memory
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ departmental bulletin paper
著者 渡辺, 重佳

× 渡辺, 重佳

WEKO 1838

渡辺, 重佳

ja-Kana ワタナベ, シゲヨシ

Search repository
廣島, 佑

× 廣島, 佑

WEKO 1839

廣島, 佑

ja-Kana ヒロシマ, ユウ

Search repository
玉井, 翔人

× 玉井, 翔人

WEKO 1840

玉井, 翔人

ja-Kana タマイ, ショウト

Search repository
横田, 智広

× 横田, 智広

WEKO 1841

横田, 智広

ja-Kana ヨコタ, トモヒロ

Search repository
佐藤, 匠

× 佐藤, 匠

WEKO 1842

佐藤, 匠

ja-Kana サトウ, タクミ

Search repository
WATANABE, Shigeyoshi

× WATANABE, Shigeyoshi

WEKO 1843

en WATANABE, Shigeyoshi

Search repository
HIROSHIMA, Yu

× HIROSHIMA, Yu

WEKO 1844

en HIROSHIMA, Yu

Search repository
TAMAI, Shoto

× TAMAI, Shoto

WEKO 1845

en TAMAI, Shoto

Search repository
YOKOTA, Tomohiro

× YOKOTA, Tomohiro

WEKO 1846

en YOKOTA, Tomohiro

Search repository
SATO, Takumi

× SATO, Takumi

WEKO 1847

en SATO, Takumi

Search repository
抄録
内容記述タイプ Abstract
内容記述 Trend of novel semiconductor memory and transistor for post Moore’s low have been described. For promising candidates for replacing presently available planar transistor are 3 dimensional transistors such as FinFET and SGT. Next candidate of FinFET is novel FinFET technology featured with plural number of trench depth with only one process step. Promising candidates of next generation memory are stacked type NAND flash memory and stacked type NAND new type memory which use SGT and BiCS technology. Especially, stacked type NAND new type memory has potential which replace not only high performance memory but also presently available system LSI.
書誌情報 湘南工科大学紀要
en : Memoirs of Shonan Institute of Technology

巻 50, 号 1, p. 39-47, 発行日 2016-03-31
出版者
出版者 湘南工科大学
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AN10400308
論文ID(NAID)
内容記述タイプ isIdenticalTo
内容記述 40020787531
戻る
0
views
See details
Views

Versions

Ver.1 2023-06-20 13:28:10.194489
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3